rectifier specialists r dc components co., l td. technical specifica tion s of silicon rectifier vol t age range - 50 to 1000 v olts current - 1.0 ampere features * low cost * low leakage * low forward voltage drop * high current capability mechanical data * case: molded plastic * epoxy: ul 94v-0 rate flame retardant * mounting position: any * weight: 0.33 gram maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. 1N4001 thru 1n4007 notes : measured at 1 mh z and applied reverse voltage of 4.0 volts dimensions in inches and (millimeters) maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t a = 75 o c peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) operating and storage temperature range symbol v rrm v dc i o i fsm t j , t stg v rms volts volts volts amps 1.0 30 -65 to + 175 amps 0 c units typical thermal resistance r q ja 50 0 c/w 50 100 200 400 600 800 1000 70 35 140 280 420 700 560 50 200 400 600 800 1000 100 1N4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 at rated dc blocking voltage maximum full load reverse current average, full cycle .375*(9.5mm) lead length at t l = 75 o c v f i r 1.1 5.0 30 uamps uamps maximum dc reverse current maximum instantaneous forward voltage at 1.0a dc volts @t a = 25 o c @t a = 100 o c 500 do-41 * lead: mil-std-202e, method 208 guaranteed * polarity: color band denotes cathode end typical junction capacitance (note) c j 15 pf 104
r dc components co., l td. ra ting and characteristic cur ves (1N4001 thru 1n4007) 105
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